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THIN-FILM CAPACITOR AND MANUFACTURING METHOD THEREFOR, AND COMPUTER PROVIDED WITH THE THIN-FILM CAPACITOR
THIN-FILM CAPACITOR AND MANUFACTURING METHOD THEREFOR, AND COMPUTER PROVIDED WITH THE THIN-FILM CAPACITOR
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机译:薄膜电容器及其制造方法,以及由该薄膜电容器提供的计算机
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摘要
PROBLEM TO BE SOLVED: To provide a thin film-capacitor whose electrostatic capacitance hardly decreases, even in the high frequency region of 1 GHz or higher.;SOLUTION: A dielectric thin film comprising perovskite oxide is formed on a lower electrode 26. Then one of thermal processes in an atmosphere containing hydrogen, a process where direct electric field of not lower than coercive electric field of the perovskite oxide is applied for a second or more to a place between an upper electrode and a lower electrode, and a process where positive and negative electric fields of not lower than coercive electric field of the perovskite oxide is applied alternately 105 times or more, to a place between the upper electrode and the lower electrode, is performed, to make the remanent polarization value of the dielectric thin film not to exceed 2.0 μC/cm2.;COPYRIGHT: (C)2001,JPO
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