SEMICONDUCTOR HAVING CAPACITIVE STRUCTURE, CHARGE PUMP CIRCUIT HAVING CAPACITIVE STRUCTURE, AND SEMICONDUCTOR DEVICE HAVING CHARGE PUMP CIRCUIT

摘要

PROBLEM TO BE SOLVED: To form a large capacity with a small area and to decrease the area of a chare pump circuit having that capacity or increase the supply capacity under the same area. ;SOLUTION: The capacitor structure of a charge pump circuit constituting a multilevel flash memory comprises a capacitor C1 formed between the floating gate of a nonvolatile memory cell and the first gate FG on the same layer and between the control gate and the second gate SG on the same layer through an insulation film, and a capacitor C2 formed between the first gate FG and the well region nwell through an insulation film. The second gate SG and the well region nwell have the same potential and two series circuits of the capacitors C1, C2 are cascaded.;COPYRIGHT: (C)2001,JPO