GALLIUM PHOSPHIDE-ARSENIDE MIXED CRYSTAL EPITAXIAL WAFER

摘要

PROBLEM TO BE SOLVED: To provide a gallium phosphide-arsenide mixed crystal epitaxial wafer which is suitable for producing LED arrays whose optical outputs are scarcely irregular.;SOLUTION: This gallium phosphide-arsenide mixed crystal epitaxial wafer comprising a compound single crystal substrate which has a zinc blend type crystal structure and comprises an element in the group IIIb and an element in the group Vb in the periodic table and a gallium phosphide-arsenide mixed crystal epitaxial layer formed on the substrate, characterized by having a GaAs1-xPx (0X≤0.45) mixed crystal epitaxial layer having a carrier concentration of 0. 95 to 20×1017 cm-3 on a surface deviated at an angle of 3 to 30° to (100) surface as the surface direction of the surface of the single crystal substrate.;COPYRIGHT: (C)2001,JPO