METHOD FOR DEPOSITING RUTHENIUM FILM BY CHEMICAL VAPOR PHASE EVAPORATION METHOD WHILE CHANGING PROCESS CONDITIONS, AND RUTHENIUM FILM DEPOSITED BY THE METHOD

摘要

PROBLEM TO BE SOLVED: To provide a method for depositing a ruthenium film good in original characteristics by a chemical vapor phase evaporation method and to provide a structure of the ruthenium film.;SOLUTION: This ruthenium film is deposited by at least two stages while process conditions are changed. Namely, in the initial stage, evaporation is performed under the condition where the nuclear forming rate of ruthenium is higher than the growing rate, and ruthenium is finely evaporated, and in the latter stage, ruthenium is evaporated under the condition where the growing rate is higher than the nuclear forming rate, and its growth to various directions is made uniform, so that a ruthenium film having good surface morphology while being fine is obtained. By this invention, the ruthenium film good in applicability for difference in level and electric characteristics can be obtained, and the same is useful particularly for an electrode of a cubic form capacitor.;COPYRIGHT: (C)2001,JPO