首页> 外国专利> ORIENTATIONAL SINGLE LAYER FERROELECTRIC OXIDE THIN FILM, METHOD FOR PRODUCING THE SAME AND SWITCHING ELEMENT USING THE THIN FILM

ORIENTATIONAL SINGLE LAYER FERROELECTRIC OXIDE THIN FILM, METHOD FOR PRODUCING THE SAME AND SWITCHING ELEMENT USING THE THIN FILM

机译:定向单层氧化铁薄膜,使用该薄膜生产相同和转换元件的方法

摘要

PROBLEM TO BE SOLVED: To provide an orientational single layer ferroelectric oxide thin film which has a smooth surface and is useful for making a high quality switching element, to provide a method for profitably produce the same, and to provide a high quality switching element obtained by laminating a conductive thin film to the ferroelectric oxide thin film having the smooth surface. ;SOLUTION: This orientational single layer ferroelectric oxide thin film is obtained by forming a ferroelectric oxide thin film having a smooth surface on a single crystal substrate. The method for producing the thin film comprises coating a coating liquid for forming the ferroelectric oxide thin film on the single crystal substrate, drying the coated liquid, and then calcining the product, and further repeating the these processes several times to accumulate a ferroelectric oxide calcination thin film having a prescribed film thickness, and subsequently crystallizing the calcined thin film.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种取向单层铁电氧化物薄膜,该薄膜具有光滑的表面并且可用于制造高质量的开关元件,提供一种有利地制造该薄膜的方法,并提供一种获得的高质量的开关元件。通过将导电薄膜层压到具有光滑表面的铁电氧化物薄膜上。 ;解决方案:该定向单层铁电氧化物薄膜是通过在单晶基板上形成表面光滑的铁电氧化物薄膜而获得的。薄膜的制造方法包括:在单晶基板上涂布用于形成铁电氧化物薄膜的涂布液,干燥该涂布液,然后进行煅烧,进一步重复这些工序数次,使铁电氧化物的煅烧累积。具有规定膜厚的薄膜,然后将经煅烧的薄膜结晶。版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001114597A

    专利类型

  • 公开/公告日2001-04-24

    原文格式PDF

  • 申请/专利权人 AGENCY OF IND SCIENCE & TECHNOL;

    申请/专利号JP19990295121

  • 发明设计人 OTA HIROYUKI;SAKAI SHIGEKI;

    申请日1999-10-18

  • 分类号C30B29/32;H01B3/12;H01L21/316;H01L41/187;H01L41/24;

  • 国家 JP

  • 入库时间 2022-08-22 01:29:00

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