CHARACTERISTICS EVALUATION APPARATUS AND METHOD FOR SEMICONDUCTOR DEVICE AND CHARACTERISTICS EVALUATION PATTERNS

摘要

PROBLEM TO BE SOLVED: To provide a MOSFET characteristics evaluation apparatus, capable of easily and accurately measuring characteristics, such as an overlap resistance Rdsw or a sheet resistance Rsh.;SOLUTION: An outer resistance Rsd1 is obtained by the user of the first evaluation pattern of a MOSFET, having a gate contact length Lgc1 and a channel width W1 (steps 100, 102). An external resistance Rsd2 is obtained by the use of the second evaluation pattern of a MOSFET, having a gate contact length Lgc2 and a channel width W2 (steps 100, 104). The sheet resistance Rsh and overlap resistance Rdsw of the MOSFET are calculated in accordance with formulas (step 106), Rsh=(W2.Rsd2-W1.Rsd1)/(Lgc2-Lgc1) and Rdsw=(W 1.Lgc2.Rsd1-W2.Lgc1.Rsd2)/(Lgc2-Lgc1).;COPYRIGHT: (C)2001,JPO