ELECTRIC CHARACTERISTIC EVALUATION PATTERN, ELECTRIC CHARACTERISTIC EVALUATION METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND RELIABILITY ASSURANCE METHOD

摘要

PROBLEM TO BE SOLVED: To solve such a problem that, as the area of an evaluation device is made larger, leak current due to tunnel effect increases, and the estimated accuracy of TDDB service life is degraded.;SOLUTION: A TEG (Test Element Group) forms an electric characteristic evaluation pattern that is provided with a plurality of unit transistors T11, T12, T13, T21, T22, T23, T31, T32, and T33. Each of the unit transistors is provided with a gate insulation film to be evaluated and a source area and a drain area that are shortcircuited with each other.;COPYRIGHT: (C)2008,JPO&INPIT