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STRAIN COMPONENT OF TRANSISTOR MEASURING METHOD AT OPERATING AMPLIFICATION OF MULTICARRIER, AND STRAIN COMPONENT MEASURING DEVICE
STRAIN COMPONENT OF TRANSISTOR MEASURING METHOD AT OPERATING AMPLIFICATION OF MULTICARRIER, AND STRAIN COMPONENT MEASURING DEVICE
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机译:多载波运算放大器中晶体管测量方法的应变分量及应变分量测量装置
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摘要
PROBLEM TO BE SOLVED: To independently set optimum impedance according to the characteristic by simultaneously and independently regulating input/output impedance against the basic wave, the higher harmonic component, and the lower frequency component of a transistor. ;SOLUTION: A signal of two waves synthesised out of respectively generated signals at a signal source 1 of frequency f1 and a signal source 2 of frequency f2 by an electric power synthesiser 3 is regulated by a variable attenuator, and input to a transistor 10 to be measured. The input side of a transistor 10 is connected to an impedance tuner 7 against a basic wave, and an impedance tuner 8 against a double wave and a triple wave. The differential frequency of the frequencies f1 and f2 being a strain component generated by a high output transistor 10 leaked in an input bias circuit 9 is regulated so that the characteristic of the high output transistor 10 becomes low strain, high efficiency, and high output, by an impedance tuner 17 constituted of an active element against low frequency of 0-1 GHz through a low pass filter 16.;COPYRIGHT: (C)2000,JPO
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