首页> 外国专利> STRAIN COMPONENT OF TRANSISTOR MEASURING METHOD AT OPERATING AMPLIFICATION OF MULTICARRIER, AND STRAIN COMPONENT MEASURING DEVICE

STRAIN COMPONENT OF TRANSISTOR MEASURING METHOD AT OPERATING AMPLIFICATION OF MULTICARRIER, AND STRAIN COMPONENT MEASURING DEVICE

机译:多载波运算放大器中晶体管测量方法的应变分量及应变分量测量装置

摘要

PROBLEM TO BE SOLVED: To independently set optimum impedance according to the characteristic by simultaneously and independently regulating input/output impedance against the basic wave, the higher harmonic component, and the lower frequency component of a transistor. ;SOLUTION: A signal of two waves synthesised out of respectively generated signals at a signal source 1 of frequency f1 and a signal source 2 of frequency f2 by an electric power synthesiser 3 is regulated by a variable attenuator, and input to a transistor 10 to be measured. The input side of a transistor 10 is connected to an impedance tuner 7 against a basic wave, and an impedance tuner 8 against a double wave and a triple wave. The differential frequency of the frequencies f1 and f2 being a strain component generated by a high output transistor 10 leaked in an input bias circuit 9 is regulated so that the characteristic of the high output transistor 10 becomes low strain, high efficiency, and high output, by an impedance tuner 17 constituted of an active element against low frequency of 0-1 GHz through a low pass filter 16.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过针对晶体管的基波,高次谐波分量和低频分量同时并独立地调节输入/输出阻抗,从而根据特性独立设置最佳阻抗。 ;解决方案:电力合成器3从频率为f1的信号源1和频率为f2的信号源2分别产生的信号中合成的两个波的信号由可变衰减器调节,并输入到晶体管10至被测量。晶体管10的输入侧与基波的阻抗调谐器7以及与双波和三波的阻抗调谐器8连接。调节频率f1和f2的差分频率,该频率f1和f2是由泄漏在输入偏置电路9中的高输出晶体管10产生的应变分量,从而高输出晶体管10的特性变为低应变,高效率和高输出,通过一个阻抗调谐器17组成,该调谐器由有源元件通过一个低通滤波器16抵抗0-1 GHz的低频信号;版权:(C)2000,JPO

著录项

  • 公开/公告号JP2000321319A

    专利类型

  • 公开/公告日2000-11-24

    原文格式PDF

  • 申请/专利权人 MITSUBISHI ELECTRIC CORP;

    申请/专利号JP19990130139

  • 发明设计人 ITO YASUYUKI;NAKAHARA KAZUHIKO;

    申请日1999-05-11

  • 分类号G01R31/26;G01R23/20;H03F1/32;

  • 国家 JP

  • 入库时间 2022-08-22 01:28:41

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