首页> 外国专利> HIGH-DENSITY PLASMA REACTION APPARATUS AND HIGH-DENSITY PLASMA REACTION METHOD

HIGH-DENSITY PLASMA REACTION APPARATUS AND HIGH-DENSITY PLASMA REACTION METHOD

机译:高密度等离子体反应装置和高密度等离子体反应方法

摘要

PROBLEM TO BE SOLVED: To provide a high-density plasma reaction apparatus and a high-density plasma reaction method capable of improving throughput and reducing a gas cost. ;SOLUTION: The high-density plasma reaction apparatus 100 has a rotary electrode 1, a high-frequency power source 7 for impressing a high-frequency voltage to the rotary electrode 1 and a stage 9 for scanning a substrate 2 in a direction parallel to the rotary electrode 1 and further has a reaction gas introducing section 3a disposed on the upstream side of the rotary electrode 1 and a reaction gas discharge section 4a disposed on the downstream side of the rotary electrode 1. The reaction gas introducing section 3a has a reaction gas introducing port 3 which is formed near the rotary electrode 1 and introduces the reaction gas. The reaction gas discharge section 4a has a reaction gas discharge port 4 which is formed near the rotary electrode 1 and discharges the reaction gas after plasma reaction.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种能够提高通过量并降低气体成本的高密度等离子体反应装置和高密度等离子体反应方法。 ;解决方案:高密度等离子体反应设备100具有旋转电极1,用于向旋转电极1施加高频电压的高频电源7和用于在与基板2平行的方向上扫描基板2的平台9。旋转电极1还具有设置在旋转电极1的上游侧的反应气体导入部3a和设置在旋转电极1的下游侧的反应气体排出部4a。反应气体导入部3a具有反应气体引入口3形成在旋转电极1附近并引入反应气体。反应气体排出部4a具有在旋转电极1附近形成的反应气体排出口4,在等离子体反应后排出反应气体。COPYRIGHT:(C)2001,JPO

著录项

  • 公开/公告号JP2001120988A

    专利类型

  • 公开/公告日2001-05-08

    原文格式PDF

  • 申请/专利权人 SHARP CORP;MORI YUZO;

    申请/专利号JP19990307765

  • 发明设计人 HOJO YOSHIYUKI;MORI YUZO;OKUDA TORU;

    申请日1999-10-28

  • 分类号B01J19/08;C23C16/505;H01L21/205;H01L21/3065;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:46

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