INTERLEAVE TYPE MEMORY DEVICE FOR BURST TYPE ACCESS IN SYNCHRONOUS READING MODE IN TWO HALF-ARRAY BEING INDEPENDENTLY READABLE IN RANDOM ACCESS ASYNCHRONOUS MODE

摘要

PROBLEM TO BE SOLVED: To provide a multi-purpose memory device suitable for an application example of a wider range independently of whether reading of data is required or not in the asynchronous mode (as in standard memory) in random access or in a synchronous progressive mode in burst type access.;SOLUTION: A memory device recognizes modes of access and reading required by a microprocessor, also enables performing self-conditioning of its internal circuit based on such a recognition to perform reading data in a required mode. At the time, an additional external control signal is not required, and sacrifice is not forced in an access time and a reading time as compared with obtained one in the case of a memory device constituted specifically for any one of operation modes for constitution of the same manufacturing technology and conventional technology.;COPYRIGHT: (C)2001,JPO