首页> 外国专利> RELIEVING AND ANALYZING METHOD FOR DEFECT OF MEMORY AND MEMORY TEST DEVICE INCORPORATING DEFECT RELIEVING AND ANALYZING DEVICE APPLYING THIS ANALYZING METHOD

RELIEVING AND ANALYZING METHOD FOR DEFECT OF MEMORY AND MEMORY TEST DEVICE INCORPORATING DEFECT RELIEVING AND ANALYZING DEVICE APPLYING THIS ANALYZING METHOD

机译:存储器和存储器测试设备的缺陷的消除和分析方法,包括应用该分析方法的缺陷消除和分析的设备

摘要

PROBLEM TO BE SOLVED: To provide a defect analyzing method of a memory by which must- repair of a memory can be retrieved at high speed and simulation processing relieving can be performed at high speed at the time of detection of must-repair. SOLUTION: This device is provided with a row address defective cell storing memory RFC and a column address defective cell storing memory CFC totalizing the number of defective cells every row addresses or every column addresses in the direction of row address and column address and storing them, either of then is read out, the number of defective cells is compared with the number of spare lines for each address, a state in which the number of defective cells existing in each address exceeds the number of spare lines is discriminated as must-repair, simulation of defect relieving is performed at the time of detection of must-repair.
机译:要解决的问题:提供一种存储器的缺陷分析方法,通过该方法可以高速检索存储器的必须修理,并且在检测到必须修理时可以高速执行模拟处理。解决方案:该设备配备了行地址缺陷单元存储存储器RFC和列地址缺陷单元存储存储器CFC,该单元总计了行地址和列地址方向上每个行地址或每列地址的缺陷单元的数量并进行存储,然后,读出其中一个,将缺陷单元的数量与每个地址的备用线的数量进行比较,将每个地址中存在的缺陷单元的数量超过备用线的数量的状态判为必须修理,缺陷修复的模拟是在检测必须修复时执行的。

著录项

  • 公开/公告号JP2001035189A

    专利类型

  • 公开/公告日2001-02-09

    原文格式PDF

  • 申请/专利权人 ADVANTEST CORP;

    申请/专利号JP19990203578

  • 发明设计人 YASUI TAKAHIRO;

    申请日1999-07-16

  • 分类号G11C29/00;G01R31/28;G06F12/16;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:22

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