首页> 外国专利> ELECTROLESS NICKEL PLATING BATH COMPOSITION AND PLATING FORMED BODY HAVING ELECTROLESS NICKEL FILM FORMED BY USING IT

ELECTROLESS NICKEL PLATING BATH COMPOSITION AND PLATING FORMED BODY HAVING ELECTROLESS NICKEL FILM FORMED BY USING IT

机译:化学镍镀浴组合物和镀成具有使用其形成的化学镍膜的成形体

摘要

PROBLEM TO BE SOLVED: To improve the adhesive strength between a glass substrate or a ceramic substrate and an Ni film by incorporating one or more kinds selected from Bi and Te as an essential additive. ;SOLUTION: In the case an electroless Ni plating bath compsn. is incorporated with Bi, ordinarily, it is charged in the form of bismuth nitrate, bismuth sulfate or the like. The amt. of Bi incorporated into the compsn. is preferably controlled to ≥0.01 mg/l expressed in terms of the Bi content. Moreover, in the case the compsn. is incorporated with Te, ordinarily, it is charged in the form of telluric acid, tellurium chloride or the like. The amt. of Te incorporated into the compsn. is preferably controlled to ≥0.01 mg/l expressed in terms of the Te content. Furthermore, the pH of the plating bath is suitably controlled to 3 to 12. For forming an Ni film, the body to be plated is dipped into a catalytic soln. contg. a Pd catalyst in advance, and Pd is adhered on the surface of the body to be plated. Next, the body to be plated is dipped into the Ni plating bath, and Ni is precipitated into the surface of the body to be plated.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过掺入选自Bi和Te中的一种或多种作为基本添加剂来提高玻璃基板或陶瓷基板与Ni膜之间的粘合强度。 ;解决方案:在化学镀镍浴槽中的情况下。通常,如果与Bi结合,则以硝酸铋,硫酸铋等的形式带电。 AMT。的Bi合并到compsn中。优选将Bi含量控制为≤0.01mg/ l。此外,在这种情况下。通常,如果将其与Te结合,则以碲酸,氯化碲等形式加入。 AMT。 Te合并到compsn中。优选将其控制为以Te含量表示为≤0.01mg/ l。此外,将镀浴的pH适当地控制为3至12。为了形成Ni膜,将待镀体浸入催化溶液中。续预先使用Pd催化剂,Pd附着在被镀体的表面上。接下来,将待镀覆的主体浸入镍镀浴中,使镍沉淀到待镀覆的主体表面中。;版权所有:(C)2000,JPO

著录项

  • 公开/公告号JP2000328254A

    专利类型

  • 公开/公告日2000-11-28

    原文格式PDF

  • 申请/专利权人 MELTEX INC;

    申请/专利号JP19990138390

  • 发明设计人 KAWASHIMA SATOSHI;

    申请日1999-05-19

  • 分类号C23C18/32;

  • 国家 JP

  • 入库时间 2022-08-22 01:27:20

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