DATA PROCESSING METHOD FOR PATTERN ONE-SHOT ELECTRON- BEAM EXPOSURE AND PATTERN ONE-SHOT ELECTRON-BEAM EXPOSURE SYSTEM

摘要

PROBLEM TO BE SOLVED: To improve shot connection precision and to form a fine pattern with high connection precision by extracting an opening for a pattern one-shot after resizing cells which are expanded into higher cells and ORed.;SOLUTION: Pattern one-shot basic cells are segmented by expanding the basic cells for a pattern one-shot to a structure which is one layer above, and performing OR operation and then a resizing process. Cells which are referred to frequently are extracted from CAD data 18 and it is judged whether the extracted cells need to be resized (S27, 28). When the cells need not to be resized (No at S28), the extracted cells are regarded as basic cells 23 for a pattern one-shot, but when the resizing process is necessary (Yes at S28), the cells are expanded to higher cells, which are then ORed (S29). The cells having been ORed are resized as specified (S30) and then basic cells 23 for the pattern one-shot are extracted from the resized cells (S31).;COPYRIGHT: (C)2000,JPO