QUANTITATIVE DETERMINATION METHOD FOR TRACE AMOUNT OF BORON IN THIN-FILM SOLID AND ANALYTICAL METHOD FOR COMPOSITION OF THIN-FILM SOLID

摘要

PROBLEM TO BE SOLVED: To obtain a quantitative determination method in which the accuracy of the working curve of a standard sample to be used can be enhanced without using a conventional ion implantation method and by using a thinner film when a trace amount of boron in a thin-film solid is quantitatively determined by secondary ion mass spectroscopy(SIMS) and to obtain an analytical method for the composition ratio (x) of a thin-film solid which is constituted of a multidimensional element such as Si1-xGex or the like.;SOLUTION: In this quantitative determination method for boron in a thin-film solid, a trace component which is contained in the thin-film solid is boron, the concentration of the boron is quantitatively determined by secondary ion mass spectroscopy(SIMS), the total amount of the boron in the thin-film solid is expressed by Q=film thickness(t)×in-film concentration (c) (atoms/cm3) of boron and a standard sample which is used to obtain the working curve of the SIMS is obtained in such a way that the boron is nuclear-reacted with a prescribed thin-film solid. In this analytical method for the composition ratio (x) of a thin-film solid, other secondary signals which are obtained by SIMS at the same time are detected by RBS.;COPYRIGHT: (C)2001,JPO