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HIGH IMPEDANCE TEST MODE FOR JTAG

机译:JTAG的高阻抗测试模式

摘要

A specially configured JTAG test circuit allows multiple bus connections within an integrated circuit chip to be selectively placed in a high impedance state in an efficient manner. The output enable shift register locations are placed in close logical proximity to one another along the JTAG data shift register boundary scan path so that data bits need not be shifted into all of the data shift register locations within the integrated circuit chip in order to selectively enable and disable the several bus interfaces within the integrated circuit chip. In this manner, the integrated circuit chip may be isolated from selected ones of the buses connected to the integrated circuit chip, while other bus connections can remain enabled to drive others of the buses connected to the integrated circuit chip. Thus, problems associated with setting the entire integrated circuit chip in a high impedance mode are avoided.
机译:特殊配置的JTAG测试电路允许以高效方式将集成电路芯片内的多个总线连接选择性地置于高阻抗状态。沿JTAG数据移位寄存器边界扫描路径将输出使能移位寄存器位置放置在彼此逻辑上接近的位置,从而无需将数据位移位到集成电路芯片内的所有数据移位寄存器位置中,即可有选择地启用并禁用集成电路芯片内的多个总线接口。以这种方式,集成电路芯片可以与连接到集成电路芯片的总线中的选定总线隔离,而其他总线连接可以保持启用以驱动连接到集成电路芯片的总线中的其他总线。因此,避免了与将整个集成电路芯片设置为高阻抗模式相关的问题。

著录项

  • 公开/公告号IL124782A

    专利类型

  • 公开/公告日2001-06-14

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号IL19960124782

  • 发明设计人

    申请日1996-09-26

  • 分类号G01R31/28;

  • 国家 IL

  • 入库时间 2022-08-22 01:25:04

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