首页> 外国专利> Chemical-pressure tailoring of low-field, room temperature magnetoresistance in (Ca, Sr, Ba) FEsub0.5/subMOsub0.5/subOsub3/sub

Chemical-pressure tailoring of low-field, room temperature magnetoresistance in (Ca, Sr, Ba) FEsub0.5/subMOsub0.5/subOsub3/sub

机译:(Ca,Sr,Ba)FE 0.5 MO 0.5 O 3 的低场,室温磁阻的化学压力调整

摘要

The room temperature, low field intergrain magnetoresistance (IMR) of the double perovsktite SrFeSUB0.5/SUBMOSUB0.5/SUBOSUB3 /SUBis found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (SrSUB0.2/SUBBaSUB0.8/SUBFeSUB0.5/SUBMoSUB0.5/SUBOSUB3/SUB) is approximately 3.5% in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.
机译:发现通过掺杂可以很好地调节双钙钛矿SrFe 0.5 MO 0.5 O 3 的室温低场晶间磁致电阻(IMR)。 Ca或Ba进入Sr部位。掺杂剂施加化学压力,从而改变居里温度和磁软度。最佳掺杂(Sr 0.2 Ba 0.8 Fe 0.5 Mo 0.5 O 3 )在100 Oe中约为3.5%,在高场中进一步增加。在这种高度自旋极化的系统中,IMR具有前所未有的强度,为在新型磁传感应用和自旋电子学中采用新型磁性材料提供了新的依据。

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