首页> 外国专利> CHEMICAL-PRESSURE TAILORING OF LOW-FIELD, ROOM TEMPERATURE MAGNETORESISTANCE IN (Ca, Sr, Ba) Fe0.5Mo0.5O¿3?

CHEMICAL-PRESSURE TAILORING OF LOW-FIELD, ROOM TEMPERATURE MAGNETORESISTANCE IN (Ca, Sr, Ba) Fe0.5Mo0.5O¿3?

机译:Fe0.5Mo0.5O?3(Ca,Sr,Ba)中低场,室温磁致电阻的化学压力裁切

摘要

The room temperature, low field intergrain magnetoresistance (IMR) of the double perovskite SrFe0.5MO0.5O3 is found to be highly tunable by doping either Ca or Ba into the Sr site. The dopant exerts a chemical pressure, changing the Curie temperature and the magnetic softness. The IMR at optimal doping (Sr0.2Ba0.8Fe0.5Mo0.5O3) is approximately 3.5 % in 100 Oe, and increases further in high fields. The unprecedented strength of the IMR in this highly spin polarized system provides new grounds for employing novel magnetic materials for new magnetic sensing applications and spin electronics.
机译:通过将Ca或Ba掺杂到Sr位置,发现钙钛矿型SrFe0.5MO0.5O3的室温低场间磁致电阻(IMR)是高度可调的。掺杂剂施加化学压力,从而改变居里温度和磁软度。最佳掺杂(Sr0.2Ba0.8Fe0.5Mo0.5O3)下的IMR在100 Oe中约为3.5%,并且在高场中进一步增加。在这种高度自旋极化的系统中,IMR具有前所未有的强度,为在新型磁传感应用和自旋电子学中采用新型磁性材料提供了新的依据。

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