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SEMICONDUCTOR HETEROSTRUCTURES WITH CRYSTALLINE SILICON CARBIDE ALLOYED WITH GERMANIUM
SEMICONDUCTOR HETEROSTRUCTURES WITH CRYSTALLINE SILICON CARBIDE ALLOYED WITH GERMANIUM
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机译:锗合金硬质合金和碳化硅的半导体异质结构
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摘要
A semiconductor heterostructure (a) is formed by mixing the elemental semiconductor germanium (Ge) with the compound semiconductor silicon carbide (SiC) to form an alloy of silicon carbide: germanium (SiC:Ge). The alloy (SiCGe) could be used alone or in multilayered structures with other semiconductors to improve the performance of electronic and optical devices and circuits.
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