首页> 外国专利> METHOD FOR PRODUCING SELF-POLARIZED FERRO-ELECTRIC LAYERS, ESPECIALLY PZT LAYERS, WITH A RHOMBOHEDRAL CRYSTAL STRUCTURE

METHOD FOR PRODUCING SELF-POLARIZED FERRO-ELECTRIC LAYERS, ESPECIALLY PZT LAYERS, WITH A RHOMBOHEDRAL CRYSTAL STRUCTURE

机译:制备具有菱形晶体结构的自极化铁电层,特别是PZT层的方法

摘要

A method for producing self-polarized ferroelectric layers, in particular PZT layers, with a rhombohedral crystal structure includes providing a substrate and heating it to a temperature T1. Afterward the layer with a rhombohedral crystal structure is applied to the substrate by means of a sputtering method. This layer includes a Zr-deficient layer with a Curie temperature TC1 and a Zr-abundant layer with a Curie temperature TC2 wherein TC2TC1T1. After the ending of the application process, the heating of the substrate is also discontinued so that the substrate cools. As a result of the cooling the Zr-deficient layer and then the Zr-abundant layer reach their Curie temperature, and change into the ferroelectric phase and become self-polarized in the process. The polarization already present in the Zr-deficient layer induces the polarization in the Zr-abundant layer, with the result that both layers are self-polarized after the cooling process.
机译:一种用于制造具有菱形晶体结构的自极化铁电层,特别是PZT层的方法,包括提供衬底并将其加热到温度T1。之后,通过溅射方法将具有菱面体晶体结构的层施加到基板上。该层包括居里温度为TC1的缺乏Zr的层和居里温度为TC2(其中TC2 <TC1 <T1)的富含Zr的层。在施加过程结束之后,也停止加热基板,以使基板冷却。冷却的结果是,缺乏Zr的层,然后富含Zr的层达到其居里温度,并转变为铁电相并在此过程中自极化。缺Zr层中已经存在的极化会在Zr丰富层中引起极化,结果是在冷却过程之后,两层都是自极化的。

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