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Method for producing self-polarized ferro-electric layers, especially PZT layers, with a rhombohedral crystal structure
Method for producing self-polarized ferro-electric layers, especially PZT layers, with a rhombohedral crystal structure
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机译:具有菱面体晶体结构的自极化铁电层,特别是PZT层的制造方法
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摘要
A method for producing self-polarized ferroelectric layers, in particular PZT layers, with a rhombohedral crystal structure includes providing a substrate and heating it to a temperature T1. Afterward the layer with a rhombohedral crystal structure is applied to the substrate by means of a sputtering method. This layer includes a Zr-deficient layer with a Curie temperature TC1 and a Zr-abundant layer with a Curie temperature TC2 wherein TC2TC1T1. After the ending of the application process, the heating of the substrate is also discontinued so that the substrate cools. As a result of the cooling the Zr-deficient layer and then the Zr-abundant layer reach their Curie temperature, and change into the ferroelectric phase and become self-polarized in the process. The polarization already present in the Zr-deficient layer induces the polarization in the Zr-abundant layer, with the result that both layers are self-polarized after the cooling process.
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机译:一种用于制造具有菱形晶体结构的自极化铁电层,特别是PZT层的方法,包括提供衬底并将其加热到温度T B 1。 B>然后,通过溅射方法将具有菱形晶体结构的层施加到基板上。该层包括具有居里温度TC 1 B>的Zr缺乏层和具有居里温度TC 2 B>的Zr丰富层,其中TC 2 / B > TC 1 / B> T 1。 B>在涂布过程结束后,也停止了对基材的加热,以使基材冷却。冷却的结果是,缺乏Zr的层,然后富含Zr的层达到其居里温度,并转变为铁电相并在此过程中自极化。缺Zr层中已经存在的极化会在Zr丰富层中引起极化,结果是在冷却过程之后,这两层都是自极化的。
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