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Method for determining a unique solution for FET equivalent circuit model parameters
Method for determining a unique solution for FET equivalent circuit model parameters
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机译:确定FET等效电路模型参数的唯一解决方案的方法
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摘要
A method of uniquely extracting both intrinsic and parasitic components from a single set of measured S-parameters is useful for extracting a single set of measured S-parameters for the development of non-linear Field Effect Transistor (FET) models. Competitive extraction where multiple trial solutions are attempted spanning a region or space of feedback impedances is used. Extraction is followed by optimization that reduces the extracted values to a model that better fits measured S-parameters. Optimization can be achieved by further evaluating the speed of convergence in an error metric.
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