ANTI SEGREGATION LAYER OF IMPURITY IONS, AN ISOLATION STRUCTURE USING THE SAME AND MANUFACTURING METHODS THEREOF

摘要

PURPOSE: A method for manufacturing an isolation structure of a semiconductor device is provided to prevent a mutual penetration of impurities between an isolation region and a semiconductor substrate, by forming a thin nitrogen-rich silicon nitride layer of several angstroms on the semiconductor substrate corresponding to the isolation region. CONSTITUTION: A silicon substrate(300) is prepared. A trench(301) is formed in a position corresponding to an isolation region of the semiconductor substrate. A nitrogen-rich silicon nitride layer having a thickness not greater than 10 angstroms is formed on the surface of the trench. The trench is filled up with an insulating material(303).