SEMICONDUCTOR DEVICE FOR REDUCING CHARGE IMPACT GENERATED BY PLASMA ETCHING PROCESS AND MANUFACTURING METHOD THEREOF

摘要

A kind of purpose: method, for manufacturing, for reducing, the semiconductor device that the charge generated by a plasma etching process impacts is arranged to improve load effect and one fowler-Nordheim tunnel(l)ing current of reduction or direct tunnel current generate in a gate, in a plasma etching process, by forming a cervical orifice of uterus on gate both sides there is charge to penetrate an insulating layer. Construction: a gate pattern formation is in the semi-conductive substrate for passing through a plasma etching method. One sub- gate pattern is formed in the both sides of big door model, so that the quantity of electric charge is reduced by the plasma in an etch process of the insulating layer by big door model.