METHOD FOR MONITORING THICKNESS OF COPPER INTERCONNECT LAYER AND METHOD FOR FORMING COPPER INTERCONNECT LAYER USING MONITORING METHOD THEREOF

摘要

PURPOSE: A method for monitoring a thickness of a copper interconnect layer and a method for forming the copper interconnect layer using the method are to form the copper interconnect layer on a separate silicone wafer instead of a product wafer, and check the thickness of the layer to control the copper plating process condition. CONSTITUTION: A method of monitoring the thickness of a copper interconnect layer comprises the steps of: forming a metal base layer on an upper face, and forming a monitor wafer, on which a photoresist film is formed, on a part of the metal base layer; and forming a copper interconnect layer on other part of the metal base layer by a changed copper playing process; removing the photoresist film, and measuring a difference between the metal base layer and the copper interconnect layer to monitor the thickness of the copper interconnect layer. A method for forming the copper interconnect layer using the method comprises the steps of: forming the copper interconnect layer on a produce wafer by the copper plating process; deciding whether the copper plating process is changed, and performing the above step if the copper plating process is not changed, and inputting the monitor wafer if the copper plating process is changed; forming the copper interconnect layer on the monitor wafer by the changed copper plating process; measuring the thickness of the plated copper interconnect layer on the monitor wafer.