METHOD FOR FORMING GATE ELECTRODE OF MULTILAYER TUNGSTEN POLYCIDE STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

A kind of purpose: method, the gate electrode for being used to form a multilayer tungsten polycide structure of semiconductor device is arranged to prevent the degeneration of a gate electrode characteristic and realizes a stable electrical characteristics of a lower resistance, by alternately executing two tungsten-silicide process, SiH4 the and SiH2Cl2 gases on a kind of top of polysilicon layer are used. Construction: in the method for forming a gate electrode (G), a gate insulating layer and a doped polysilicon (16) are sequentially formed on semi-conductive substrate (10), the one tungsten-polycide structure with semiconductor device. First tungsten silicide layer (18) as SiH2Cl2 and WF6 by using a kind of idle source gas to be formed in doped polysilicon layer. Undoped polysilicon layer (20) is formed in the first tungsten silicide layer. Second tungsten silicide layer (22) as SiH3 and WF6 by using a kind of idle source gas to be formed in undoped polysilicon layer. One gate electrode of form is patterned to using a gate mask, the second tungsten silicide layer, undoped polysilicon layer, the first tungsten silicide layer and doped polysilicon layer by a photolithography process.