首页> 外国专利> DUPLEX ZONE SHOWER HEAD AND CHEMICALLY ENHANCED CHEMICAL VAPOR DEPOSITION DEVICE USING THE ZONE SHOWER

DUPLEX ZONE SHOWER HEAD AND CHEMICALLY ENHANCED CHEMICAL VAPOR DEPOSITION DEVICE USING THE ZONE SHOWER

机译:使用区域喷淋器的双区带喷淋头和化学增强的化学气相沉积装置

摘要

PURPOSE: A duplex zone shower head and a chemically enhanced chemical vapor deposition device using the zone shower are provided to improve characteristics of adhesion, vapor deposition speed, texture, and step coverage of metal thin film. CONSTITUTION: The duplex zone shower head includes the first shower zone(311) and the second shower zone(321). The first shower zone receives a vapor source material by way of a vapor source material inlet line and contains the material to inject the material through vapor source material injection nozzle. The second shower zone receives and contains a chemical adding agent by way of a chemical inject line and injects the adding agent to a reaction chamber through a chemical injection nozzle. The first shower zone and the second shower zone are formed to be separated. The injection nozzle of the second shower zone further is made of SUS, Ni, Al2O3 material and has a cylindrical formation whose diameter is between 0.1 and 5 millimeters.
机译:用途:提供了双区淋浴喷头和使用该区淋浴的化学增强型化学气相沉积设备,以改善金属薄膜的附着力,气相沉积速度,织构和台阶覆盖率。组成:双工区淋浴喷头包括第一淋浴区(311)和第二淋浴区(321)。第一喷淋区通过蒸气源材料入口管线接收蒸气源材料,并且包含通过蒸气源材料注入喷嘴注入材料的材料。第二喷淋区通过化学注入管线接收并容纳化学添加剂,并通过化学注入喷嘴将添加剂注入反应室。第一淋浴区和第二淋浴区形成为分开的。第二喷淋区的喷嘴还由SUS,Ni,Al 2 O 3材料制成,并且具有直径在0.1至5毫米之间的圆柱形结构。

著录项

  • 公开/公告号KR20010065193A

    专利类型

  • 公开/公告日2001-07-11

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR19990065062

  • 发明设计人 PYO SEONG GYU;

    申请日1999-12-29

  • 分类号H01L21/205;

  • 国家 KR

  • 入库时间 2022-08-22 01:13:16

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