METHOD FOR MEASURING DEFECTS REGION OF VACANCY SHAPE OF SINGLE SILICON CRYSTAL ROD BY ETCHING METHOD

摘要

PURPOSE: A measurement method of a defects region of a vacancy shape in a single silicon crystal rod is provided to measure precisely a defects region in a single crystal rod manufactured by a czochralski method in a short time. CONSTITUTION: A surface of a sample obtained by cutting a single silicon crystal rod is polished. At first, the sample is heat treated at a temperature for forming defects and at secondly, the sample is heat treated at a temperature for growing the defects. The heat treated sample is secco etched using a secco etching solution during a time for forming an etch fit at the defects portion. A data with regard to the defects region is obtained by performing an observation of an eye or a photographic. The first heat treatment is performed for a 4 hours at a temperature of 700-800 °C, and the second heat treatment is performed for 16 hours at 1050 °C.