首页>
外国专利>
PREPARATION METHOD OF CERAMIC COMPOSITE MATERIAL FORMING DIAMOND THIN FILM LAYER, AND CERAMIC DIAMOND COMPOSITE MATERIAL THEREBY
PREPARATION METHOD OF CERAMIC COMPOSITE MATERIAL FORMING DIAMOND THIN FILM LAYER, AND CERAMIC DIAMOND COMPOSITE MATERIAL THEREBY
展开▼
机译:陶瓷复合材料成形金刚石薄膜层的制备方法及由此得到的陶瓷复合材料
展开▼
页面导航
摘要
著录项
相似文献
摘要
PURPOSE: A method for preparing a ceramic composite material forming a diamond thin film layer and a ceramic diamond composite material prepared by the method are provided, to form a diamond thin film layer on the surface of a ceramic material with improved in adhesion strength by changing the microstructure of a ceramic material. CONSTITUTION: The method comprises the steps of mixing 70-80 wt.% of a Si3N4-based ceramic material and 20-30 wt.% of Y2O3-Al2O3(6) for 3-10 hours to obtain rather non-uniform mixture; drying the mixture composition by using a common microwave drier, sintering the mixture at a temperature of 1,800 deg.C and at atmospheric pressure under nitrogen atmosphere with a pressure of 3-5 MPa for 2 hours, and sintering it at a temperature of 1,800-2,050 deg.C with a gas pressure of 3-5 MPa for 2 hours, to promote the growth of particle by the phase transfer of Si3N4 and to obtain a rod-shaped -Si3N4 particle; leaving the rod-shaped -Si3N4 particle at a room temperature to solidify liquid Y2O3-Al2O3, corroding the solidified Y2O3-Al2O3 to allow the rod-shaped -Si3N4 particle to be projected in the length of 3 mm or more, and evaporation-depositing a diamond thin film layer(4) on the surface, thereby allowing the grown rod-shaped -Si3N4 particle to be bonded with the surface.
展开▼
机译:目的:提供一种形成金刚石薄膜层的陶瓷复合材料的制备方法,以及通过该方法制备的陶瓷金刚石复合材料,以通过改变其在陶瓷材料的表面上形成粘合强度提高的金刚石薄膜层。陶瓷材料的微观结构。组成:该方法包括以下步骤:将70-80 wt。%的Si3N4基陶瓷材料和20-30 wt。%的Y2O3-Al2O3(6)混合3-10小时,以获得相当不均匀的混合物。通过使用普通的微波干燥机干燥混合物组合物,在1800℃的温度和大气压下在氮气气氛中以3-5 MPa的压力烧结混合物2小时,然后在1800-800℃的温度下烧结在2050℃,3-5MPa的气压下进行2小时,以通过Si 3 N 4的相转移促进颗粒的生长,并获得棒状-Si 3 N 4颗粒;使棒状-Si3N4颗粒在室温下固化以固化液体Y2O3-Al2O3,腐蚀固化的Y2O3-Al2O3,使棒状-Si3N4颗粒突出3 mm或更长的长度,并进行蒸镀在表面上形成金刚石薄膜层(4),从而使生长的棒状-Si 3 N 4颗粒与表面结合。
展开▼