首页> 外国专利> METHOD OF MAKING SHIELD AND PLASMA ETCHING APPARATUS FOR ENHANCED INDUCTIVE COUPLING TO PLASMAS WITH REDUCED SPUTTER CONTAMINATION

METHOD OF MAKING SHIELD AND PLASMA ETCHING APPARATUS FOR ENHANCED INDUCTIVE COUPLING TO PLASMAS WITH REDUCED SPUTTER CONTAMINATION

机译:减少屏蔽污染的增强屏蔽耦合至等离子体的屏蔽和等离子体刻蚀设备制造方法

摘要

Method of manufacturing a shield plate to remove the spa emitter sources insulating window of the present invention after performing the etching process in the plasma etching apparatus in the absence of the shield plate, and samples the etched regions formed on the insulating window, the sampled etched region and to form a corresponding shielding film constitutes the shielding plate. The plasma etching apparatus of the present invention, the shielding film corresponding to the shape of the coil is formed in the shielding plate is provided with an opening corresponding to the clearance between the coil. The shielding plate is provided with an insulating window position on one side of the process chamber is grounded between the coils located outside the insulating surface of the window.
机译:在没有屏蔽板的情况下在等离子刻蚀设备中执行刻蚀工艺之后,制造屏蔽板以去除本发明的水疗发射极源绝缘窗的屏蔽板的方法,并对形成在绝缘窗上的蚀刻区域进行取样,区域并形成相应的屏蔽膜构成屏蔽板。在本发明的等离子蚀刻装置中,在屏蔽板上形成有与线圈的形状相对应的屏蔽膜,该屏蔽膜具有与线圈之间的间隙相对应的开口。屏蔽板在处理室的一侧上设置有绝缘窗位置,该绝缘窗位置在位于窗的绝缘表面外侧的线圈之间接地。

著录项

  • 公开/公告号KR100291898B1

    专利类型

  • 公开/公告日2001-06-01

    原文格式PDF

  • 申请/专利权人 NULL NULL;

    申请/专利号KR19990012530

  • 发明设计人 신은희;김진만;최백순;차훈;

    申请日1999-04-09

  • 分类号H01L21/3065;

  • 国家 KR

  • 入库时间 2022-08-22 01:12:21

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