Method of forming YBCO thin film on sapphire substrate

摘要

The present invention relates to a method for forming a YBCO thin film using a sapphire substrate, which can improve the critical current density and critical temperature.; Method for forming a YBCO thin film using a sapphire substrate according to the present invention, to adjust the positioning of the sapphire substrate on a substrate holder of a vacuum chamber of the PLD equipment, the temperature of the substrate holder 750 ℃ ​​to 850 ℃ and maintained at that temperature the sapphire step of, and adjust the internal pressure of the vacuum chamber 45 mTorr to about 55 mTorr, by scanning a laser beam on the target of cerium oxide material by adjusting the energy density of the excimer laser with 0.8 J / ㎠ to 2.0 J / ㎠ in step and the inside of the vacuum chamber to deposit cerium oxide film as a buffer film on a substrate in-situ it is characterized in that comprises the step of depositing a YBCO thin film on the cerium oxide film.; Therefore, there is a critical current density and critical temperature of the YBCO thin film is enhanced effect to improve the reliability of the electronic device such as a microwave element, a fault current limiter, and SFQ SQUID to which the YBCO thin film applications.