Gas sensors for sulfur compound gas detection and their fabrication method with CuO addition by dual lon beam sputtering

摘要

The present invention relates to as making a semiconductor type gas sensor sensitive to the sulfur compound gas, n-type semiconductor-type thin film form of SnO _2, or by the addition of CuO with a dual ion beam sputtering over ZnO at low concentrations in the ppm or less by making the double junction structure in manufacturing a substrate, consisting of a heater, an electrode, n-type oxide semiconductor and the p-type pn junction of the oxide semiconductor to heat the sensor the gas sensor related to a method for producing a detection layer having a high sensitivity, on an insulating substrate n-type oxide is formed, and wherein the thickness by a dual ion beam sputtering on the surface of the semiconductor clad 0.1~20nm range of CuO thin film, in the hydrogen sulfide sensor element, SnO2, or in the range of the thickness on the substrate 10nm~1000nm the n-type oxide semiconductor layer of ZnO is formed, a dual ion beam sputtering on the n-type oxide semiconductor layer Thickness of the formed thin film by ringbeop 0.1~20nm range of CuO, these n-type oxide semiconductor layer and the CuO layer is repeated three times at one time, two electrodes may be formed on the same surface of the substrate formed on the top floor and that is characterized.