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摘要

PURPOSE: A method for manufacturing semiconductor devices is provided to reduce the height between a gate electrode and a bitline by forming a bitline immediately after a bitline contact plug simultaneously formed with a bitline contact pad is formed. CONSTITUTION: The method forms a gate pattern(106) in a semiconductor substrate(100) in which a device isolation film is formed to define an active region(104). A source/drain region(108) is formed in the active region exposed at both sides of the gate pattern by means of an ion implantation process. A gate spacer(110) is formed at both sides of the gate pattern. Source/drain electrodes(112a,112b) connected to the drain electrode(112b) are formed on the drain electrode. A storage electrode connected to the source electrode is formed on the source electrode.