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method of determining the type of conductivity of degenerate semiconductor materials

机译:确定退化的半导体材料的电导率类型的方法

摘要

1.method of determining the type of conductivity of degenerate semiconductor materials, mainly with different effective masses of electrons and holes, u043eu0441u043du043eu0432u0430u043du043du044b in the comparison of parameters measured in the study material and u044du0442u0430u043bu043eu043du0435 differs, however, in order to facilitate and ensure the touch determination of the type of p u0440u043eu0432u043eu0434u0438u043cu043eu0441u0442u0438 u043fu0440u0438u043fu043eu0432u0435u0440u0445u043du043eu0441u0442u043du044bu0445 layersthe benchmark used u043du0435u0432u044bu0440u043eu0436u0434u0435u043du043du044bu0439 semiconductor material, sample and standard light polarized light with a wavelength of not exceeding the length of the ox. the red border acquisitions u03bbu044du0442u0430u043bu043eu043du0430, and reinventing themselves and find the least u043eu0442u0441u0442u043eu044fu0449u0438u0435 wavelengths from each other and from the u03bbu0437u043du0430u0447u0435u043du0438u044f u03bbu0438 several wavelengths, which are the parameter values u044du043bu043bu0438u043fu0441u043eu043cu0435u0442u0440u0438u0447u0435u0441u043au043eu0433u043e psi model and standardin the range of wavelengths, and compares the parameters of several u03bbu0441u043du0438u043cu0430u044eu0442 dependence model u03c8u0438 standard u03c8u043eu0442 wavelength and determine the type of conductivity to the sign or u0394u03c8 (several) = psi, psi: u0394u03c8 (several) 0 - n - type u0394u03c8 (several) 0 - p - u0442u0438u043f.2. method for 1, which was the fact that the parameters u03c8u0438 u03c8u0438u0437u043cu0435u0440u044fu044eu0442 at a wavelength lying in the range of u03bbu2245 several u2245 several.
机译:1.通过比较在测量的参数中确定主要具有不同电子和空穴有效质量的简并半导体材料的电导类型的方法,学习资料和 u044d u0442 u0430 u043b u043e u043d u0435有所不同,但是,为了方便并确保对p类型的触摸确定, u0440 u043e u0432 u043e u0434 u0438 u043c u043e u0441 u0442 u0438 u043f u0440 u0438 u043f u043e u0432 u0435 u0440 u0445 u043d u043e u043e u0441 u0442 u043d u044b u0445层使用的基准 u043d u0435 u0432 u0440 u043e u0436 u0434 u0435 u043d u043d u044b u0439半导体材料,样品和标准光偏振光,其波长不超过ox的长度。红色边界采集 u03bb u044d u0442 u0430 u043b u043e u043d u0430,并进行自我改造,找到了最小的 u043e u0442 u0441 u0442 u043e u044f u0449 u0449 u0438 u0435彼此之间的波长并从 u03bb u0437 u043d u0430 u0447 u0435 u043d u0438 u044f u03bb u0438几个波长开始,这些波长是参数值 u044d u043b u043b u0438 u043f u0431 u0431 u043e u043c u0435 u0442 u0440 u0438 u0447 u0435 u0441 u043a u043e u0433 u043e psi模型和标准波长范围内的psi模型,并比较多个 u03bb u0441 u043d u043d u0438 u043c u0430 u044e u0442依赖模型 u03c8 u0438标准 u03c8 u043e u0442波长,并确定符号的电导率类型或 u0394 u03c8(几)= psi,psi: u0394 u03c8(几)<0-n-类型 u0394 u03c8(多个)> 0-p- u0442 u0438 u043f.2。 1的方​​法,这是参数 u03c8 u0438 u03c8 u0438 u0437 u043c u0435 u0440 u044f u044e u0442的波长处于 u03bb u2245几个 u2245多个范围内的事实。

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