Production of an integrated circuit semiconductor component comprises producing gate paths in the regions of a substrate, forming source/drain regions in one region and distance pieces

摘要

Production of an IC semiconductor component comprises preparing a semiconductor substrate (1) with a first and a second (9) region; producing gate paths in the regions; producing source/drain regions (11) in the first region neighboring the gate paths and two distance pieces (18) on the gate paths; and forming source-gate regions in the second region neighboring the gate paths and contacts on predetermined source-drain regions before all distance pieces have been produced in the first region. Preferred Features: To prepare the contacts in the second region, landing pads made of polysilicon are used. Silicide layers made of CoSi2, TaSi2, TiSi2 or WSix are formed on the gate paths in the first region.