Method for removing solid residual matter on surfaces of semiconductor layers occurring during wet etching involves chemical dipping, a first quick rinse with DI water, turning layers at a preset angle and a second quick rinse.

摘要

Side areas of layers (30) are turned away from a whirling area behind the connecting area of a layer retainer (31) and a mount (41). The process involves chemical dipping, a first quick rinse with DI water, turning the layers at a preset angle and a second quick rinse with DI water followed by washing off and drying.