首页> 外国专利> Forming thin coating for manufacturing semiconducting components involves applying coating to material resistant to melting temperature or cover of material to coating before melting

Forming thin coating for manufacturing semiconducting components involves applying coating to material resistant to melting temperature or cover of material to coating before melting

机译:形成用于制造半导体元件的薄涂层涉及在耐熔化温度的材料上涂覆涂层或在熔化之前将材料覆盖在涂层上

摘要

The method involves applying a material to a bearer to form a coating, e.g. by deposition, melting the coating and cooling to crystallize it. The coating is applied to a material resistant to the melting temperature or a cover of the material is applied to the coating before melting. The material is chemically inert relative to the coating material and/or an oxide layer is formed between the coating and cover at least during crystallization.
机译:该方法包括将一种材料施加到载体上以形成涂层,例如涂层。通过沉积,熔化涂层并冷却使其结晶。将涂层施加到耐熔化温度的材料上,或者在熔化之前将材料的覆盖层施加到涂层上。所述材料相对于涂层材料是化学惰性的和/或至少在结晶期间在涂层和覆盖层之间形成氧化物层。

著录项

  • 公开/公告号DE10005484A1

    专利类型

  • 公开/公告日2001-08-16

    原文格式PDF

  • 申请/专利权人 ANGEWANDTE SOLARENERGIE - ASE GMBH;

    申请/专利号DE20001005484

  • 发明设计人 BUSS WERNER;

    申请日2000-02-08

  • 分类号H01L21/20;H01L31/0392;H01L31/036;H01L31/18;H01L21/324;

  • 国家 DE

  • 入库时间 2022-08-22 01:10:00

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