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Sensor element used for the quantitative determination of mercury, has gold layer applied in partial surfaces in the form of bridge switch on thin carrier membrane

机译:用于定量测定汞的传感器元件,在薄载体膜上以桥式开关的形式在部分表面上涂有金层

摘要

Sensor element (1) has a gold layer applied in partial surfaces (2) in the form of a bridge switch (37) on a thin carrier membrane (10). A separate heating layer (3) is arranged below the gold layer and can be heated to regenerate the gold layer after the quantitative determination of mercury. The gold layer, carrier membrane and heating layer are arranged on a substrate (9) which has a flat break-through (11) below the region covered by the gold layer. Preferred Features: The thin carrier membrane is made from silicon nitride. The heating layer is made from polycrystalline silicon. The gold layer is 10-100 nm thick. The bridge switch is in the form of a Wheatstone bridge. A measuring element (4) is arranged on the substrate to measure the temperature of the gold layer or to measure the temperatures of the partial surfaces of the gold layer. The active surfaces of the sensor element are connected by aluminum wires.
机译:传感器元件(1)具有金层,该金层以桥接开关(37)的形式施加在局部表面(2)上,该金层位于薄的载体膜(10)上。单独的加热层(3)布置在金层下方,可以在定量测定汞后加热以使金层再生。金层,载体膜和加热层布置在衬底(9)上,该衬底在由金层覆盖的区域下方具有平坦的穿透部(11)。优选特征:薄载体膜由氮化硅制成。加热层由多晶硅制成。金层是10-100nm厚。桥式开关采用惠斯通电桥的形式。测量元件(4)布置在衬底上以测量金层的温度或测量金层的部分表面的温度。传感器元件的活动表面通过铝线连接。

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