Silicon carbide production from plant matter containing silica involves drying, pulverization and heating at a reaction temperature in reducing process gas atmosphere

摘要

In the production of highly pure silicon carbide (SiC) from plant matter (I) containing silicon (Si), (I) containing over 2% silica (SiO2), based on dry substance, is dried and crushed to a powder with a particle size of 1-500 mu m, then heated in a reducing process gas atmosphere and kept at a reaction temperature between 1300 and 2300 deg C for 2-120 minutes.