Production of conducting pathways on an integrated chip comprises applying a stacked dielectric layer, carrying out photolithography, etching, applying conducting material and removing, and applying an insulating layer

摘要

Production of conducting pathways on an integrated chip comprises: (i) applying a stacked dielectric layer; (ii) carrying out photolithography to define contact holes (30); (iii) etching the holes; (iv) applying conducting material and removing outside of the holes; (v) applying an insulating layer (50); (vi) carrying out photolithography to define conducting pathways; (vii) etching conducting pathway trenches (80); and (viii) applying conducting material and removing outside of the trenches. Production of conducting pathways on an integrated chip comprises: (a) applying a stacked dielectric layer consisting of a lower (21) and an upper dielectric layer (22) with an antireflection layer (60) arranged between them; (b) carrying out photolithography to define contact holes (30) in the dielectric layer; (c) etching the holes in the stacked layer; (d) applying conducting material and removing the material outside of the holes so that recesses (40) are formed over the contact holes; (e) applying an insulating layer (50); (f) carrying out photolithography to define conducting pathways in the region of individual contact holes on the insulating layer; (g) etching conducting pathway trenches (80) in the insulating layer and the upper dielectric layer lying underneath so that the antireflection layer acts as an etch stop; and (h) applying conducting material and removing the material outside of the trenches and the recesses over the contact holes. Preferred Features: The insulating layer is made from silicon nitride. The antireflection layer is a light-absorbing inorganic material, especially silicon oxynitride. Polycrystalline silicon is used to fill the contact holes and tungsten is used to fill the trenches and the recesses above the contact holes.