Semiconductor memory for computer, has memory cell array with peripheral circuit area and insulating layer formed on peripheral circuit area to alleviate step formed by cylindrical electrode in memory cell

摘要

Memory array area contains many memory cells and peripheral circuit area which contains elements to control memory cell. The memory cell has porous cylindrical electrode (1). Insulating layers (6,20) are formed on the peripheral circuit area to avoid step formed by cylindrical electrode. An Independent claim is also included for semiconductor memory manufacturing method.