Semiconducting memory device has replacement word lines with minimum distance between replacement word lines greater than minimum distance between normal word lines

摘要

The memory device has normal cells (41-48) in a matrix, normal word lines (11-14) corresp. to the matrix rows, replacement cells (61-64) in a matrix for replacement of faulty normal cells and replacement word lines (21, 22) corresp. to the replacement cell matrix rows. The replacement word lines are arranged so that the minimum distance between the replacement word lines is greater than the minimum distance between the normal word lines