Semiconducting device has silicon in isolator substrate, insulating layer, semiconducting layer, transistor with gate electrode, polycrystalline semiconducting region and contact hole

摘要

The device has a silicon in isolator or SOI substrate (1) with a semiconducting substrate (2), an insulating layer (3) and a semiconducting layer (4) stacked in that order, a transistor (10) arranged in an element formation region and a channel formation region (5) selectively arranged in a main surface of the semiconducting layer, a gate electrode (7) on the gate insulation film (6) and source/drain regions, an intermediate insulating film (12), a polycrystalline semiconducting region (17,18) without contact with the gate insulating film and a contact hole (13,15) filled with polycrystalline semiconductor material.