首页> 外国专利> Production of semiconductor component used in solar cells comprises forming first semiconductor layer on substrate, producing second semiconductor layer on first layer and removing second layer by laser abrasion

Production of semiconductor component used in solar cells comprises forming first semiconductor layer on substrate, producing second semiconductor layer on first layer and removing second layer by laser abrasion

机译:太阳能电池中使用的半导体组件的生产包括在基板上形成第一半导体层,在第一层上生产第二半导体层以及通过激光磨蚀去除第二层

摘要

Production of a semiconductor component comprises forming a first semiconductor layer (4) on a substrate (1); producing a second semiconductor layer on the first semiconductor layer; and removing the second semiconductor layer with predetermined pattern by laser abrasion until the first layer is exposed to form an electrode pattern. Preferred Features: The substrate is made of single crystalline silicon. The first semiconductor layer is produced by joining a porous layer (2) to the substrate. The first semiconductor layer is produced as a p-semiconductor layer and the second semiconductor layer as an n-semiconductor layer.
机译:半导体部件的制造包括在衬底(1)上形成第一半导体层(4);以及在第一半导体层上产生第二半导体层;通过激光研磨去除具有预定图案的第二半导体层,直到暴露出第一层以形成电极图案。优选特征:基底由单晶硅制成。第一半导体层是通过将多孔层(2)接合到基板上而制成的。第一半导体层被制造为p半导体层,并且第二半导体层被制造为n半导体层。

著录项

  • 公开/公告号DE10050577A1

    专利类型

  • 公开/公告日2001-04-19

    原文格式PDF

  • 申请/专利权人 SONY CORP. TOKIO/TOKYO;

    申请/专利号DE20001050577

  • 发明设计人 MATSUSHITA TAKESHI;MIZUNO SHINICHI;

    申请日2000-10-12

  • 分类号H01L21/283;H01L31/0224;H01L31/0392;H01L31/18;

  • 国家 DE

  • 入库时间 2022-08-22 01:09:41

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