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Capacitor for semiconductor memory such as DRAM has silicon nitride film formed between lower electrode and tantalum oxide film on which upper electrode is formed
Capacitor for semiconductor memory such as DRAM has silicon nitride film formed between lower electrode and tantalum oxide film on which upper electrode is formed
A Ta2O5 film (43) is formed over silicon nitride film (42) which is formed on lower electrode (40). The upper electrode (45) is formed on the Ta2O5 film. An Independent claim is also included for semiconductor memory manufacture.
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机译:在形成于下部电极(40)上的氮化硅膜(42)上形成Ta 2 O 5膜(43)。在Ta 2 O 5膜上形成上部电极(45)。独立索赔也包括在半导体存储器制造中。
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