首页> 外国专利> Single-pole double-throw switch for communications unit has cut-off voltages of FETs set to fulfill inequalities

Single-pole double-throw switch for communications unit has cut-off voltages of FETs set to fulfill inequalities

机译:通信单元单刀双掷开关的FET截止电压设置为满足不等式

摘要

The switch includes two FETs with Schottky gates. The drain of the first FET is connected to the first terminal of the switch, and the source of the second FET is connected to the second terminal of the switch. The source of the first FET and the drain of the second FET are directly connected together and connected to a common terminal of the switch. The cut-off voltage of the FETs are set to fulfil inequalities relating the cut-off voltages to the voltages applied to gate terminals. An Independent claim is included for a communications unit.
机译:该开关包括两个带有肖特基栅极的FET。第一FET的漏极连接到开关的第一端子,并且第二FET的源极连接到开关的第二端子。第一FET的源极和第二FET的漏极直接连接在一起并连接到开关的公共端子。 FET的截止电压被设定为满足使截止电压与施加到栅极端子的电压相关的不等式。通信单元包括独立索赔。

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