首页> 外国专利> Electron beam source, and method for manufacturing the same, electron beam sources device and an electron beam apparatus with the use of the same

Electron beam source, and method for manufacturing the same, electron beam sources device and an electron beam apparatus with the use of the same

机译:电子束源及其制造方法,电子束源装置以及使用该电子束源的电子束装置

摘要

PURPOSE: To provide an electron beam source which can generate electron beam of a unicolor and high brightness. ;CONSTITUTION: An electron forming means, e.g. a doped Si layer 2, to generate electrons in a conduction band is formed near the tip surface of a needle like structure 1 having a sharp tip part and made of a substance at least the surface of which is a semiconductor single crystal or single crystal insulating substance. It is preferable to form a surface passivation layer 4 on the surface of the needle-like structure 1. Furthermore, a means to excite electrons in a valence electron band may be formed instead of the doped Si layer 2.;COPYRIGHT: (C)1996,JPO
机译:目的:提供一种能够产生单色高亮度电子束的电子束源。 ;组成:电子形成装置,例如在具有尖的尖端部分的针状结构1的尖端表面附近形成掺杂的Si层2,以在导带中产生电子,该针状结构1的尖端至少由表面是半导体单晶或单晶绝缘的物质制成物质。优选在针状结构1的表面上形成表面钝化层4。此外,可以形成激发价电子带中的电子的装置来代替掺杂的Si层2 。;版权所有:(C) 1996年

著录项

  • 公开/公告号DE69518397T2

    专利类型

  • 公开/公告日2001-03-29

    原文格式PDF

  • 申请/专利权人 HITACHI LTD.;

    申请/专利号DE1995618397T

  • 申请日1995-12-15

  • 分类号H01J1/30;H01J37/073;H01J9/02;

  • 国家 DE

  • 入库时间 2022-08-22 01:08:33

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号