首页> 外国专利> STRUCTURAL CHANGES FROM HIGH SPACE MATERIALS SUBJECT TO CHANGED TEMPERATURES

STRUCTURAL CHANGES FROM HIGH SPACE MATERIALS SUBJECT TO CHANGED TEMPERATURES

机译:高空间材料的结构变化随温度的变化而变化

摘要

A process for fabricating a magnetic data storage medium includes formation of a controlled texture, either over an annular transducing head contact area or the entire surface of a substrate. The texture layer is formed by vacuum deposition of a texturing material onto a smooth surface of a non-magnetic substrate. The texturing material has a surface energy greater than that of the substrate, and the texturing material and substrate material have different linear coefficients of thermal expansion. Just before deposition of the texture layer, the substrate is heated to a temperature of 200 - 600 DEG C, then allowed to cool during texture layer deposition. The substrate and texture layer contract at different rates as they cool, inducing mechanical stresses within the texture layer sufficient to plastically deform the texture layer, creating multiple dome-like bumps. Subsequent thin film layers, including an underlayer, a magnetic recording layer and a protective cover layer, have uniform thicknesses and tend to replicate the texture layer topography. The resulting medium performs well under CSS testing at flying heights of less than 1.0 microinch, and exhibits excellent corrosive resistance when the substrate is formed of glass, glass ceramic or quartz. The process can be performed on all conventional types of substrates, including aluminum nickel-phosphorous substrates.
机译:一种制造磁数据存储介质的方法,包括在环形换能头接触区域或基板整个表面上形成受控纹理。通过将纹理化材料真空沉积到非磁性基板的光滑表面上来形成纹理层。纹理材料的表面能大于基底的表面能,并且纹理材料和基底材料具有不同的线性热膨胀系数。在沉积纹理层之前,将衬底加热到​​200-600℃的温度,然后在纹理层沉积期间使其冷却。基底和纹理层在冷却时以不同的速率收缩,从而在纹理层内引起足以使纹理层发生塑性变形的机械应力,从而形成多个圆顶状凸起。随后的薄膜层,包括底层,磁记录层和保护性覆盖层,具有均匀的厚度,并且倾向于复制纹理层的形貌。所得的介质在CSS测试中在小于1.0微英寸的悬浮高度下表现良好,并且当基材由玻璃,玻璃陶瓷或石英制成时,具有优异的耐腐蚀性。可以在所有常规类型的基板上执行该过程,包括铝镍-磷基板。

著录项

  • 公开/公告号DE69521911D1

    专利类型

  • 公开/公告日2001-08-30

    原文格式PDF

  • 申请/专利权人 SEAGATE TECHNOLOGY LLC SCOTTS VALLEY;

    申请/专利号DE19956021911T

  • 发明设计人 GAO CHUAN;MASSEY DARRIN;

    申请日1995-11-03

  • 分类号G11B5/84;C23C14/54;

  • 国家 DE

  • 入库时间 2022-08-22 01:08:29

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