首页> 外国专利> Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom

Process for manufacturing high-sensitivity capacitive and resonant integrated sensors, particularly accelerometers and gyroscopes, and sensors made therefrom

机译:制造高灵敏度电容和谐振集成传感器(特别是加速度计和陀螺仪)的方法以及由其制成的传感器

摘要

A sensor having high sensitivity is formed using a suspended structure with a high-density tungsten core. To manufacture it, a sacrificial layer of silicon oxide, a polycrystal silicon layer, a tungsten layer and a silicon carbide layer are deposited in succession over a single crystal silicon body. The suspended structure is defined by selectively removing the silicon carbide, tungsten and polycrystal silicon layers. Then spacers of silicon carbide are formed which cover the uncovered ends of the tungsten layer, and the sacrificial layer is then removed.
机译:使用具有高密度钨芯的悬挂结构形成具有高灵敏度的传感器。为了制造它,在单晶硅体上依次沉积氧化硅牺牲层,多晶硅层,钨层和碳化硅层。通过有选择地去除碳化硅,钨和多晶硅层来定义悬空结构。然后,形成覆盖钨层的未覆盖端的碳化硅间隔物,然后去除牺牲层。

著录项

  • 公开/公告号US06184052B2

    专利类型

  • 公开/公告日2001-02-06

    原文格式PDF

  • 申请/专利权人

    申请/专利号US09428863

  • 申请日1999-10-26

  • 分类号H01L210/00;

  • 国家 US

  • 入库时间 2022-08-22 01:07:27

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