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Semiconductor memory configuration with a refresh logic circuit, and method of refreshing a memory content of the semiconductor memory configuration

机译:具有刷新逻辑电路的半导体存储器配置以及刷新半导体存储器配置的存储器内容的方法

摘要

In a semiconductor memory configuration, a refresh operation is always started by a refresh logic circuit when a comparison circuit determines that there is a specific minimum difference when comparing a characteristic variable of at least one reference memory cell with a reference value (VREF).
机译:在半导体存储器配置中,当比较电路在将至少一个参考存储单元的特性变量与参考值(VREF)进行比较时确定存在特定的最小差时,总是由刷新逻辑电路开始刷新操作。

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