首页>
外国专利>
Plasma treatment of an interconnect surface during formation of an interlayer dielectric
Plasma treatment of an interconnect surface during formation of an interlayer dielectric
展开▼
机译:层间电介质形成过程中对互连表面的等离子体处理
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to the formation of an ILD layer while preventing or reducing oxidation of the upper surface of a metallic interconnect. Avoidance of oxidation of the upper surface of a metallic interconnect is achieved according to the present invention by passivating the exposed upper surface of the metallic interconnect prior to formation of the ILD. In order to avoid the oxidation of an upper surface of an interconnect during the formation of an ILD layer, an in situ passivation of the upper surface of the interconnect is formed immediately prior to or simultaneously with the formation of the ILD.
展开▼